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edition april 4, 1996 6251-365-1ds hal501...506, 508, 509, hal516...518 hall effect sensor family edition aug. 11, 1999 6251-485-1ds micr onas micr onas micr onas micr onas micronas
hal5xx micronas intermetall 2 contents page section title 3 1. introduction 3 1.1. features 3 1.2. family overview 4 1.3. marking code 4 1.4. operating junction temperature range 4 1.5. hall sensor package codes 4 1.6. solderability 5 2. functional description 6 3. specifications 6 3.1. outline dimensions 6 3.2. dimensions of sensitive area 6 3.3. positions of sensitive areas 7 3.4. absolute maximum ratings 7 3.5. recommended operating conditions 8 3.6. electrical characteristics 9 3.7. magnetic characteristics overview 14 4. type descriptions 14 4.1. hal 501 16 4.2. hal 502 18 4.3. hal 503 20 4.4. hal 504 22 4.5. hal 505 24 4.6. hal 506 26 4.7. hal 508 28 4.8. hal 509 30 4.9. hal 516 32 4.10. hal 517 34 4.11. hal 518 36 5. application notes 36 5.1. ambient temperature 36 5.2. extended operating conditions 36 5.3. start-up behavior 36 5.4. emc 40 6. data sheet history
hal5xx micronas intermetall 3 hall effect sensor family in cmos technology release notes: revision bars indicate significant changes to the previous edition. 1. introduction the hal5xx family consists of different hall switches produced in cmos technology. all sensors include a temperature-compensated hall plate with active offset compensation, a comparator, and an open-drain output transistor. the comparator compares the actual mag- netic flux through the hall plate (hall voltage) with the fixed reference values (switching points). accordingly, the output transistor is switched on or off. the sensors of this family differ in the switching behavior and the switching points. the active offset compensation leads to constant mag- netic characteristics over supply voltage and tempera- ture range. in addition, the magnetic parameters are ro- bust against mechanical stress effects. the sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 v to 24 v in the ambient temperature range from 40 c up to 150 c. all sensors are available in a smd-package (sot-89a) and in a leaded version (to-92ua). the introduction of the additional smd-package sot-89b is planned for 1999. 1.1. features: switching offset compensation at typically 62 khz operates from 3.8 v to 24 v supply voltage overvoltage protection at all pins reverse-voltage protection at v dd -pin magnetic characteristics are robust against mechani- cal stress effects short-circuit protected open-drain output by thermal shut down operates with static magnetic fields and dynamic mag- netic fields up to 10 khz constant switching points over a wide supply voltage range the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the mag- netic characteristics ideal sensor for applications in extreme automotive and industrial environments emc corresponding to din 40839 1.2. family overview the types differ according to the magnetic flux density values for the magnetic switching points, the tempera- ture behavior of the magnetic switching points, and the mode of switching. type switching behavior sensitivity see page 501 bipolar very high 14 502 latching high 16 503 latching medium 18 504 unipolar medium 20 505 latching low 22 506 unipolar high 24 508 unipolar medium 26 509 unipolar low 28 516 unipolar with inverted output high 30 517 unipolar with inverted output medium 32 518 unipolar with inverted output medium 34 latching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. bipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not.
hal5xx micronas intermetall 4 unipolar switching sensors: the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. unipolar switching sensors with inverted output: the output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. 1.3. marking code all hall sensors have a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. type temperature range a k e c hal501 501a 501k 501e 501c hal502 502a 502k 502e 502c hal503 503a 503k 503e 503c hal504 504a 504k 504e 504c hal505 505a 505k 505e 505c hal506 506a 506k 506e 506c hal508 508a 508k 508e 508c hal509 509a 509k 509e 509c hal516 516a 516k 516e 516c hal517 517a 517k 517e 517c hal518 518a 518k 518e 518c 1.4. operating junction temperature range a: t j = 40 c to +170 c k: t j = 40 c to +140 c e: t j = 40 c to +100 c c: t j = 0 c to +100 c the hall sensors from micronas intermetall are specified to the chip temperature (junction temperature t j ). the relationship between ambient temperature (t a ) and junction temperature is explained in section 5.1. on page 36. 1.5. hall sensor package codes type: 5xx halxxxpa-t temperature range: a, k, e, or c package: sf for sot-89b so for sot-89a ua for to-92ua type: 505 package: to-92ua temperature range: t j = 40 c to +100 c example: hal505ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: aordering codes for hall sensorso. 1.6. solderability all packages: according to iec68-2-58 out gnd 3 2 1 v dd fig. 11: pin configuration
hal5xx micronas intermetall 5 2. functional description the hal 5xx sensors are monolithic integrated circuits which switch in response to magnetic fields. if a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased hall plate forces a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the comparator. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. if the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. the built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. magnetic offset caused by mechanical stress is com- pensated for by using the aswitching offset compensa- tion techniqueo. therefore, an internal oscillator pro- vides a two phase clock. the hall voltage is sampled at the end of the first phase. at the end of the second phase, both sampled and actual hall voltages are aver- aged and compared with the actual switching point. sub- sequently, the open drain output switches to the ap- propriate state. the time from crossing the magnetic switching level to switching of output can vary between zero and 1/f osc . shunt protection devices clamp voltage peaks at the output-pin and v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to 15 v. no external reverse protection diode is needed at the v dd -pin for reverse voltages ranging from 0 v to 15 v. fig. 21: hal5xx block diagram hal5xx temperature dependent bias switch hysteresis control comparator output v dd 1 out 3 clock hall plate gnd 2 hal5xx short circuit & overvoltage protection reverse voltage & overvoltage protection t v ol v out 1/f osc = 16 m s fig. 22: timing diagram v oh b b on f osc t t t f t i dd t
hal5xx micronas intermetall 6 3. specifications 3.1. outline dimensions fig. 31: plastic small outline transistor package (sot-89a) weight approximately 0.04 g dimensions in mm min. 0.25 4.55 0.1 2.6 0.1 0.4 0.4 1.7 0.4 1.5 3.0 0.06 0.04 branded side spgs7001-7-a3/2e sensitive area top view y 123 2 4 0.2 1.53 0.05 0.125 0.7 x1 x2 fig. 32: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm min. 0.25 2.55 0.1 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-3-a3/2e sensitive area top view y 123 4 0.2 1.15 0.05 0.125 0.3 4.55 0.1 1.7 2 x1 x2 note: this package will be introduced in 1999. samples are available. contact the sales offices for high volume delivery. 0.75 0.2 fig. 33: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm sensitive area 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 1.27 1.27 (2.54) 123 0.42 1.5 0.05 4.06 0.1 3.05 0.1 0.48 spgs7002-7-a/2e 3.1 0.2 x2 x1 for all package diagrams, a mechanical tolerance of 50 m m applies to all dimensions where no tolerance is explicitly given. 3.2. dimensions of sensitive area 0.25 mm x 0.12 mm 3.3. positions of sensitive areas sot-89a sot-89b to-92ua |x 2 x 1 | / 2 < 0.2 mm y = 0.98 mm 0.2 mm y = 0.95 mm 0.2 mm y = 1.0 mm 0.2 mm
hal5xx micronas intermetall 7 3.4. absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 15 28 1) v v p test voltage for supply 1 24 2) v i dd reverse supply current 1 50 1) ma i ddz supply current through protection device 1 200 3) 200 3) ma v o output voltage 3 0.3 28 1) v i o continuous output on current 3 50 1) ma i omax peak output on current 3 250 3) ma i oz output current through protection device 3 200 3) 200 3) ma t s storage temperature range 65 150 c t j junction temperature range 40 40 150 170 4) c 1) as long as t j max is not exceeded 2) with a 220 w series resistance at pin 1 corresponding to test circuit 1 3) t<2 ms 4) t < 1000h stresses beyond those listed in the aabsolute maximum ratingso may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the arecommended operating conditions/characteristicso of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 3.8 24 v i o continuous output on current 3 0 20 ma v o output voltage (output switched off) 3 0 24 v
hal5xx micronas intermetall 8 3.6. electrical characteristics at t j = 40 c to +170 c , v dd = 3.8 v to 24 v, as not otherwise specified in conditions typical characteristics for t j = 25 c and v dd = 12 v symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 2.3 3 4.2 ma t j = 25 c i dd supply current over temperature range 1 1.6 3 5.2 ma v ddz overvoltage protection at supply 1 28.5 32 v i dd = 25 ma, t j = 25 c, t = 20 ms v oz overvoltage protection at output 3 28 32 v i oh = 25 ma, t j = 25 c, t = 20 ms v ol output voltage 3 130 280 mv i ol = 20 ma, t j = 25 c v ol output voltage over temperature range 3 130 400 mv i ol = 20 ma i oh output leakage current 3 0.06 0.1 m a output switched off, t j = 25 c, v oh = 3.8 to 24 v i oh output leakage current over temperature range 3 10 m a output switched off, t j 150 c, v oh = 3.8 to 24 v f osc internal oscillator chopper frequency 49 62 khz t j = 25 c, v dd = 4.5 v to 24 v f osc internal oscillator chopper fre- quency over temperature range 38 62 khz t en(o) enable time of output after setting of v dd 1 30 70 m s v dd = 12 v 1) t r output rise time 3 75 400 ns v dd = 12 v, r l = 820 ohm, c l = 20 pf t f output fall time 3 50 400 ns v dd = 12 v, r l = 820 ohm, c l = 20 pf r thjsb case sot-89a sot-89b thermal resistance junction to substrate backside 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 34 r thja case to-92ua thermal resistance junction to soldering point 150 200 k/w 1) b > b on + 2 mt or b < b off 2 mt for hal 50x, b > b off + 2 mt or b < b on 2 mt for hal 51x fig. 34: recommended pad size sot-89x dimensions in mm 5.0 2.0 2.0 1.0
hal5xx micronas intermetall 9 3.7. magnetic characteristics overview at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. sensor parameter on point b on off point b off hysteresis b hys unit switching type t j min. typ. max. min. typ. max. min. typ. max. hal 501 40 c 0.8 0.6 2.5 2.5 0.8 0.8 0.5 1.4 2 mt bipolar 25 c 0.5 0.5 2.3 2.3 0.7 0.5 0.5 1.2 1.9 mt 170 c 1.5 0.7 3 2.5 0.2 2 0.4 0.9 1.8 mt hal 502 40 c 1 2.8 5 5 2.8 1 4.5 5.6 7.2 mt latching 25 c 1 2.6 4.5 4.5 2.6 1 4.5 5.2 7 mt 170 c 0.9 2.3 4.3 4.3 2.3 0.9 3.5 4.6 6.8 mt hal 503 40 c 6.4 8.6 10.8 10.8 8.6 6.4 14.6 17.2 20.6 mt latching 25 c 6 8 10 10 8 6 13.6 16 18 mt 170 c 4 6.4 8.9 8.9 6 4 11 12.4 16 mt hal 504 40 c 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 mt unipolar 25 c 9.5 12 14.5 5 7 9 4 5 6.5 mt 170 c 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 mt hal 505 40 c 11.8 15 18.3 18.3 15 11.8 26 30 34 mt latching 25 c 11 13.5 17 17 13.5 11 24 27 32 mt 170 c 9.4 11.7 16.1 16.1 11.7 9.4 20 23.4 31.3 mt hal 506 40 c 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 mt unipolar 25 c 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 mt 170 c 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 mt hal 508 40 c 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 mt unipolar 25 c 15 18 20.7 13.5 16 19 1.5 2 2.7 mt 170 c 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 mt hal 509 40 c 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 mt unipolar 25 c 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 mt 170 c 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 mt hal 516 40 c 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 mt unipolar 25 c 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 mt inverted 170 c 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 mt hal 517 40 c 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 mt unipolar 25 c 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 mt inverted 170 c 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 mt hal 518 40 c 14 16.7 20 15.5 19 22 1.5 2.3 3 mt unipolar 25 c 13.5 16 19 15 18 20.7 1.4 2 2.8 mt inverted 170 c 11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 mt note: for detailed descriptions of the individual types, see pages 14 and following.
hal5xx micronas intermetall 10 15 10 5 0 5 10 15 20 1510 5 0 5 10 15 20 25 30 35 v ma v dd i dd t a = 40 c t a = 25 c t a =170 c 25 hal 5xx fig. 35: typical supply current versus supply voltage 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 12345678 v ma v dd i dd t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 5xx fig. 36: typical supply current versus supply voltage 0 1 2 3 4 5 50 0 50 100 150 200 c ma t a i dd v dd = 3.8 v v dd = 12 v v dd = 24 v hal 5xx fig. 37: typical supply current versus ambient temperature 0 10 20 30 40 50 60 70 80 90 100 50 0 50 100 150 200 c khz t a f osc v dd = 3.8 v v dd = 4.5 v...24 v hal 5xx fig. 38: typ. internal chopper frequency versus ambient temperature
hal5xx micronas intermetall 11 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 v khz v dd f osc t a = 40 c t a = 25 c t a = 170 c hal 5xx fig. 39: typ. internal chopper frequency versus supply voltage 0 10 20 30 40 50 60 70 80 90 100 3 3.5 4.0 4.5 5.0 5.5 6.0 v khz v dd f osc t a = 40 c t a = 25 c t a = 170 c hal 5xx fig. 310: typ. internal chopper frequency versus supply voltage 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v mv v dd v ol t a = 40 c t a = 25 c t a = 170 c i o = 20 ma t a = 100 c hal 5xx fig. 311: typical output low voltage versus supply voltage 0 100 200 300 400 500 600 3 3.5 4.0 4.5 5.0 5.5 6.0 v mv v dd v ol t a = 40 c t a = 25 c t a = 170 c i o = 20 ma t a =100 c hal 5xx fig. 312: typical output low voltage versus supply voltage
hal5xx micronas intermetall 12 0 100 200 300 400 50 0 50 100 150 200 c mv t a v ol v dd = 24 v v dd = 3.8 v v dd = 4.5 v hal 5xx fig. 313: typical output low voltage versus ambient temperature i o = 20 ma 15 20 25 30 35 v a v oh i oh t a = 40 c t a = 170 c t a = 150 c t a = 100 c t a = 25 c 10 6 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 4 hal 5xx fig. 314: typical output high current versus output voltage 50 0 50 100 150 200 c m a t a i oh v oh = 24 v v oh = 3.8 v 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 hal 5xx fig. 315: typical output leakage current versus ambient temperature
hal5xx micronas intermetall 13 30 20 10 0 10 20 30 0.01 0.10 1.00 10.00 100.00 1000.00 db m a f i dd v dd = 12 v t a = 25 c quasi-peak- measurement hal 5xx max. spurious signals 1 10 100 1000 mhz fig. 316: typ. spectrum of supply current 0 10 20 30 40 50 60 70 80 0.01 0.10 1.00 10.00 100.00 1000.00 db m v f v dd v p = 12 v t a = 25 c quasi-peak- measurement test circuit 2 hal 5xx max. spurious signals 1 10 100 1000 mhz fig. 317: typ. spectrum at supply voltage
hal501 micronas intermetall 14 4. type description 4.1. hal 501 the hal 501 is the most sensitive sensor of this family with bipolar switching behavior (see fig. 41). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output state is not defined for all sensors if the magnetic field is removed again. some sensors will change the output state and some sensors will not. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: switching type: bipolar very high sensitivity typical b on : 0.5 mt at room temperature typical b off : 0.7 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz applications the hal 501 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, rotating speed measurement, cam shaft sensors, and magnetic encoders. fig. 41: definition of magnetic switching points for the hal 501 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset b offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 0.8 0.6 2.5 2.5 0.8 0.8 0.5 1.4 2 0.1 mt 25 c 0.5 0.5 2.3 2.3 0.7 0.5 0.5 1.2 1.9 1.4 0.1 1.4 mt 100 c 0.9 0.5 2.5 2.5 0.6 0.9 0.5 1.1 1.8 0 mt 140 c 1.2 0.6 2.8 2.5 0.5 1.3 0.5 1.1 1.8 0 mt 170 c 1.5 0.7 3 2.5 0.2 2 0.4 0.9 1.8 0.2 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal501 micronas intermetall 15 3 2 1 0 1 2 3 0 5 10 15 20 25 30 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 501 b on b off fig. 42: typ. magnetic switching points versus supply voltage 3 2 1 0 1 2 3 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 501 b on b off fig. 43: typ. magnetic switching points versus supply voltage 3 2 1 0 1 2 3 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 501 fig. 44: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal502 micronas intermetall 16 4.2. hal 502 the hal 502 is the most sensitive latching sensor of this family (see fig. 45). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: switching type: latching high sensitivity typical b on : 2.6 mt at room temperature typical b off : 2.6 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k applications the hal 502 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, rotating speed measurement, commutation of brushless dc motors, cam shaft sensors, and magnetic encoders. fig. 45: definition of magnetic switching points for the hal 502 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 1 2.8 5 5 2.8 1 4.5 5.6 7.2 0 mt 25 c 1 2.6 4.5 4.5 2.6 1 4.5 5.2 7 1.5 0 1.5 mt 100 c 0.95 2.5 4.4 4.4 2.5 0.95 4 5 6.8 0 mt 140 c 0.9 2.4 4.3 4.3 2.4 0.9 3.7 4.8 6.8 0 mt 170 c 0.9 2.3 4.3 4.3 2.3 0.9 3.5 4.6 6.8 0 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal502 micronas intermetall 17 6 4 2 0 2 4 6 0 5 10 15 20 25 30 v mt v dd b on b off hal 502 b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 46: typ. magnetic switching points versus supply voltage 6 4 2 0 2 4 6 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 502 b on b off fig. 47: typ. magnetic switching points versus supply voltage 6 4 2 0 2 4 6 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 502 fig. 48: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal503 micronas intermetall 18 4.3. hal 503 the hal 503 is a latching sensor (see fig. 49). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: switching type: latching medium sensitivity typical b on : 7.6 mt at room temperature typical b off : 7.6 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k applications the hal 503 is the optimal sensor for applications with alternating magnetic signals such as: multipole magnet applications, rotating speed measurement, commutation of brushless dc motors, and window lifter. fig. 49: definition of magnetic switching points for the hal 503 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 6.4 8.4 10.8 10.8 8.6 6.4 14.6 17 20.6 0.1 mt 25 c 6 7.6 10 10 7.6 6 13.6 15.2 18 1.5 0 1.5 mt 100 c 4.8 7.1 9.5 9.5 6.9 4.8 12.3 14 17 0.1 mt 140 c 4.4 6.7 9.2 9.2 6.4 4.4 11.5 13.1 16.5 0.1 mt 170 c 4 6.4 8.9 8.9 6 4 11 12.4 16 0.2 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal503 micronas intermetall 19 12 8 4 0 4 8 12 0 5 10 15 20 25 30 v mt v dd b on b off hal 503 b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 410: typ. magnetic switching points versus supply voltage 12 8 4 0 4 8 12 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 503 b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 411: typ. magnetic switching points versus supply voltage 12 8 4 0 4 8 12 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 503 fig. 412: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus ambient temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal504 micronas intermetall 20 4.4. hal 504 the hal 504 is a unipolar switching sensor (see fig. 413). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: switching type: unipolar medium sensitivity typical b on : 12 mt at room temperature typical b off : 7 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k applications the hal 504 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end-point detection, and rotating speed measurement. b hys output voltage fig. 413: definition of magnetic switching points for the hal 504 0b off b on v ol v o b magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 10.3 13 15.7 5.3 7.5 9.6 4.4 5.5 6.5 10.2 mt 25 c 9.5 12 14.5 5 7 9 4 5 6.5 7.2 9.5 11.8 mt 100 c 9 11.1 14.1 4.6 6.4 8.7 3.6 4.7 6.4 8.8 mt 140 c 8.7 10.6 13.9 4.4 6.1 8.6 3.4 4.5 6.4 8.4 mt 170 c 8.5 10.2 13.7 4.2 5.9 8.5 3.2 4.3 6.4 8 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal504 micronas intermetall 21 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 504 b on b off fig. 414: typ. magnetic switching points versus supply voltage 0 2 4 6 8 10 12 14 16 18 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 504 b on b off fig. 415: typ. magnetic switching points versus supply voltage 0 2 4 6 8 10 12 14 16 18 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 504 fig. 416: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal505 micronas intermetall 22 4.5. hal 505 the hal 505 is a latching sensor (see fig. 417). the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. for correct functioning in the application, the sensor re- quires both magnetic polarities (north and south) on the branded side of the package. magnetic features: switching type: latching low sensitivity typical b on : 13.5 mt at room temperature typical b off : 13.5 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k applications the hal 505 is the optimal sensor for applications with alternating magnetic signals such as: multipole magnet applications, rotating speed measurement, commutation of brushless dc motors, and window lifter. fig. 417: definition of magnetic switching points for the hal 505 b hys output voltage 0 b off b on v ol v o b magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 11.8 15 18.3 18.3 15 11.8 26 30 34 0 mt 25 c 11 13.5 17 17 13.5 11 24 27 32 1.5 0 1.5 mt 100 c 10.2 12.4 16.6 16.6 12.4 10.2 22 24.8 31.3 0 mt 140 c 9.7 12 16.3 16.3 12 9.7 21 24.2 31.3 0 mt 170 c 9.4 11.7 16.1 16.1 11.7 9.4 20 23.4 31.3 0 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal505 micronas intermetall 23 20 15 10 5 0 5 10 15 20 0 5 10 15 20 25 30 v mt v dd b on b off hal 505 b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 418: typ. magnetic switching points versus supply voltage 20 15 10 5 0 5 10 15 20 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 505 b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 419: typ. magnetic switching points versus supply voltage 20 15 10 5 0 5 10 15 20 50 0 50 100 150 200 hal 505 c mt t a , t j b on b off b on max b on typ b on min b off max b off typ b off min v dd = 3.8 v v dd = 4.5 v... 24 v fig. 420: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus ambient temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal506 micronas intermetall 24 4.6. hal 506 the hal 506 is the most sensitive unipolar switching sensor of this family (see fig. 421). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 5xx family, the hal 516 is a sensor with the same magnetic characteristics but with an inverted out- put characteristic. magnetic features: switching type: unipolar high sensitivity typical b on : 5.5 mt at room temperature typical b off : 3.5 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k applications the hal 506 is the optimal sensor for all applications with one magnetic polarity and weak magnetic ampli- tude at the sensor position such as: applications with large airgap or weak magnets, solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. b hys output voltage 0b off b on v ol v o b fig. 421: definition of magnetic switching points for the hal 506 magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 4.3 5.9 7.7 2.1 3.8 5.4 1.6 2.1 2.8 4.8 mt 25 c 3.8 5.5 7.2 2 3.5 5 1.5 2 2.7 3.8 4.5 6.2 mt 100 c 3.6 5.1 7 1.9 3.3 4.9 1.2 1.8 2.6 4.2 mt 140 c 3.4 4.8 6.9 1.8 3.1 5.1 1 1.7 2.6 4 mt 170 c 3.2 4.6 6.8 1.7 3 5.2 0.9 1.6 2.6 3.8 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal506 micronas intermetall 25 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 506 b on b off fig. 422: typ. magnetic switching points versus supply voltage 0 1 2 3 4 5 6 7 8 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 506 b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 423: typ. magnetic switching points versus supply voltage 0 1 2 3 4 5 6 7 8 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 506 fig. 424: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal508 micronas intermetall 26 4.7. hal 508 the hal 508 is a unipolar switching sensor (see fig. 425). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 5xx family, the hal 518 is a sensor with the same magnetic characteristics but with an inverted out- put characteristic. magnetic features: switching type: unipolar medium sensitivity typical b on : 18 mt at room temperature typical b off : 16 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k applications the hal 508 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. b hys output voltage 0b off b on v ol v o b fig. 425: definition of magnetic switching points for the hal 508 magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 15.5 19 21.9 14 16.7 20 1.6 2.3 2.8 17.8 mt 25 c 15 18 20.7 13.5 16 19 1.5 2 2.7 14 17 20 mt 100 c 13.9 16.6 20.4 12.5 14.8 18.7 1.2 1.8 2.6 15.7 mt 140 c 13.2 15.8 20.2 11.9 14.1 18.5 1.1 1.7 2.6 15 mt 170 c 12.7 15.3 20 11.4 13.6 18.3 1 1.7 2.6 14.4 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal508 micronas intermetall 27 0 5 10 15 20 25 0 5 10 15 20 25 30 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 508 b on b off fig. 426: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 508 b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 427: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 508 fig. 428: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal509 micronas intermetall 28 4.8. hal 509 the hal 509 is the least sensitive unipolar switching sensor of this family (see fig. 429). the output turns low with the magnetic south pole on the branded side of the package and turns high if the mag- netic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: switching type: unipolar low sensitivity typical b on : 26.8 mt at room temperature typical b off : 23.2 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 300 ppm/k applications the hal 509 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. b hys output voltage 0b off b on v ol v o b fig. 429: definition of magnetic switching points for the hal 509 magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 23.1 27.4 31.1 19.9 23.8 27.2 2.9 3.6 3.9 25.6 mt 25 c 23.1 26.8 30.4 19.9 23.2 26.6 2.8 3.5 3.9 21.5 25 28.5 mt 100 c 22.2 26.1 29.7 19.1 22.7 25.9 2.7 3.4 3.8 24.4 mt 140 c 21.7 25.7 29.2 18.6 22.4 25.6 2.6 3.3 3.8 24 mt 170 c 21.3 25.4 28.9 18.3 22.1 25.3 2.5 3.3 3.8 23.7 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal509 micronas intermetall 29 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 509 b on b off fig. 430: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 30 35 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 509 b on b off fig. 431: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 30 35 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 509 fig. 432: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal516 micronas intermetall 30 4.9. hal 516 the hal 516 is the most sensitive unipolar switching sensor with an inverted output of this family (see fig. 433). the output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 5xx family, the hal 506 is a sensor with the same magnetic characteristics but with a normal output characteristic. magnetic features: switching type: unipolar inverted high sensitivity typical b on : 3.5 mt at room temperature typical b off : 5.5 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k applications the hal 516 is the optimal sensor for all applications with one magnetic polarity and weak magnetic ampli- tude at the sensor position where an inverted output sig- nal is required such as: applications with large airgap or weak magnets, solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. b hys output voltage 0b on b off v o v ol b fig. 433: definition of magnetic switching points for the hal 516 magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 2.1 3.8 5.4 4.3 5.9 7.7 1.6 2.1 2.8 4.8 mt 25 c 2 3.5 5 3.8 5.5 7.2 1.5 2 2.7 3.8 4.5 6.2 mt 100 c 1.9 3.3 4.9 3.6 5.1 7 1.2 1.8 2.6 4.2 mt 140 c 1.8 3.1 5.1 3.4 4.8 6.9 1 1.7 2.6 4 mt 170 c 1.7 3 5.2 3.2 4.6 6.8 0.9 1.6 2.6 3.8 mt the hysteresis is the difference between the switching points b hys = b off b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal516 micronas intermetall 31 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 516 b on b off fig. 434: typ. magnetic switching points versus supply voltage 0 1 2 3 4 5 6 7 8 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 516 b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 435: typ. magnetic switching points versus supply voltage 0 1 2 3 4 5 6 7 8 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 516 fig. 436: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal517 micronas intermetall 32 4.10. hal 517 the hal 517 is a unipolar switching sensor with inverted output (see fig. 437). the output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. magnetic features: switching type: unipolar inverted medium sensitivity typical on point is 16.2 mt at room temperature typical off point is 18.3 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 1700 ppm/k applications the hal 517 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. b hys output voltage 0b on b off v o v ol b fig. 437: definition of magnetic switching points for the hal 517 magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 14 17.1 21.5 15.5 19.6 22.5 1.6 2.5 3 18.3 mt 25 c 13.5 16.2 19 15 18.3 20.7 1.5 2.1 2.7 14 17.2 20 mt 100 c 11 14.3 18.5 12.8 16.1 20.4 1.2 1.8 2.6 15.2 mt 140 c 10 13.2 18.2 11.5 14.8 20.2 1 1.6 2.6 14 mt 170 c 9 12.3 18 10.5 13.7 20 0.8 1.4 2.4 13 mt the hysteresis is the difference between the switching points b hys = b off b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal517 micronas intermetall 33 0 5 10 15 20 25 0 5 10 15 20 25 30 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 517 b on b off fig. 438: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 517 b on b off fig. 439: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 517 fig. 440: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus ambient temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal518 micronas intermetall 34 4.11. hal 518 the hal 518 is a unipolar switching sensor with inverted output (see fig. 441). the output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. the sensor does not respond to the magnetic north pole on the branded side. for correct functioning in the application, the sensor re- quires only the magnetic south pole on the branded side of the package. in the hal 5xx family, the hal 508 is a sensor with the same magnetic characteristics but with a normal output characteristic. magnetic features: switching type: unipolar inverted medium sensitivity typical b on : 16 mt at room temperature typical b off : 18 mt at room temperature operates with static magnetic fields and dynamic mag- netic fields up to 10 khz typical temperature coefficient of magnetic switching points is 1000 ppm/k applications the hal 518 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. b hys output voltage 0b on b off v o v ol b fig. 441: definition of magnetic switching points for the hal 518 magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 14 16.7 20 15.5 19 22 1.5 2.3 3 17.8 mt 25 c 13.5 16 19 15 18 20.7 1.4 2 2.8 14 17 20 mt 100 c 12.5 14.8 18.7 13.9 16.6 20.4 1 1.8 2.7 15.7 mt 140 c 11.7 14.1 18.5 13 15.8 20.2 0.9 1.7 2.7 15 mt 170 c 11 13.6 18.3 12.2 15.3 20 0.8 1.7 2.6 14.4 mt the hysteresis is the difference between the switching points b hys = b off b on the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2
hal518 micronas intermetall 35 0 5 10 15 20 25 0 5 10 15 20 25 30 v mt v dd b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c hal 518 b on b off fig. 442: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off hal 518 b on t a = 40 c t a = 25 c t a = 170 c t a = 100 c b off fig. 443: typ. magnetic switching points versus supply voltage 0 5 10 15 20 25 50 0 50 100 150 200 c mt t a , t j b on b off v dd = 3.8 v v dd = 4.5 v... 24 v b on max b on typ b on min b off max b off typ b off min hal 518 fig. 444: magnetic switching points versus temperature note: in the diagram amagnetic switching points versus temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction temperature, whereas typical curves refer to ambient temperature.
hal5xx micronas intermetall 36 5. application notes 5.1. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tem- perature t a ). t j = t a + d t at static conditions, the following equation is valid: d t = i dd * v dd * r th for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: t amax = t jmax d t 5.2. extended operating conditions all sensors fulfill the electrical and magnetic characteris- tics when operated within the recommended operating conditions (see page 7). supply voltage below 3.8 v typically, the sensors operate with supply voltages above 3 v, however, below 3.8 v some characteristics may be outside the specification. note: the functionality of the sensor below 3.8 v has not been tested. for special test conditions, please contact micronas intermetall. 5.3. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the electrical characteristics (see page 8). during the initialization time, the output state is not de- fined and the output can oscillate. after t en(o) , the output will be low if the applied magnetic field b is above b on . the output will be high if b is below b off . in case of sen- sors with an inverted switching behavior (hal 516 ... hal518), the output state will be high if b > b off and low if b < b on . for magnetic fields between b off and b on , the output state of the hal sensor after applying v dd will be either low or high. in order to achieve a well-defined output state, the applied magnetic field must be above b onmax , respectively, below b offmin . 5.4. emc for applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figures 51 and 52). the series resistor and the capacitor should be placed as closely as possible to the hal sensor. test circuits for electromagnetic compatibility test pulses v emc corresponding to din 40839. note: the international standard iso 7637 is similar to the used product standard din 40839. out gnd 3 2 1v dd 4.7 nf v emc r v 220 w r l 680 w fig. 51: test circuit 1 out gnd 3 2 1v dd 4.7 nf v emc v p r v 220 w r l 1.2 k w 20 pf fig. 52: test circuit 2
hal5xx micronas intermetall 37 interferences conducted along supply lines in 12 v onboard systems product standard: din 40839 part 1 pulse level u s in v test circuit pulses/ time function class remarks 1 iv 100 1 5000 c 5 s pulse interval 2 iv 100 1 5000 c 0.5 s pulse interval 3a iv 150 2 1 h a 3b iv 100 2 1h a 4 iv 7 2 5 a 5 iv 86.5 1 10 c 10 s pulse interval electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines product standard: din 40839 part3 pulse level u s in v test circuit pulses/ time function class remarks 1 iv 30 2 500 a 5 s pulse interval 2 iv 30 2 500 a 0.5 s pulse interval 3a iv 60 2 10 min a 3b iv 40 2 10 min a radiated disturbances product standard: din 40839 part4 test conditions temperature: room temperature (22 ... 25 c) supply voltage: 13 v lab equipment: tem cell 220 mhz with adaptor board 455 mm, device 80 mm over ground frequency range: 5 ... 220 mhz; 1 mhz steps test circuit 2 with r l = 1.2 k w tested with static magnetic fields tested devices and results type field strength during test modulation result hal 50x > 200 v/m output voltage stable on the level high or low 1) hal 50x > 200 v/m 1 khz 80 % output voltage stable on the level high or low 1) 1) low level < 0.4 v, high level > 90% of v dd
hal5xx micronas intermetall 38
hal5xx micronas intermetall 39
hal5xx micronas intermetall 40 6. data sheet history 1. final data sheet: ahal 501...506, 508, 509, 516... 518, hall effect sensor family, aug. 11, 1999, 6251-485-1ds. first release of the final data sheet. major changes to the previous edition ahal501 ... hal506, hal 508o, hall effect sensor ics, may 5, 1997, 6251-405-1ds: additional types: hal509, hal516 ... hal518 additional package sot-89b additional temperature range ako outline dimensions for sot-89a and to-92ua changed absolute maximum ratings changed electrical characteristics changed magnetic characteristics for hal 501, hal 503, hal 506, and hal 509 changed micronas intermetall gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@intermetall.de internet: http://www.intermetall.de printed in germany by systemdruck+verlags-gmbh, freiburg (08/99) order no. 6251-485-1ds all information and data contained in this data sheet are with- out any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery dates are ex- clusively subject to our respective order confirmation form; the same applies to orders based on development samples deliv- ered. by this publication, micronas intermetall gmbh does not assume responsibility for patent infringements or other rights of third parties which may result from its use. reprinting is generally permitted, indicating the source. how- ever, our prior consent must be obtained in all cases.
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